Achieving epitaxy and intense luminescence in Ge/Rb-implanted -quartz

P. K Sahoo, S Gasiorek, K. P Lieb, Kai Arstila, Juhani Keinonen

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    The luminescence properties of ion-beam doped silica and quartz depend sensitively on the ion species and fluence and the thermal processing during and after ion implantation. In an attempt to achieve high luminescence intensity and full planar recrystallization of alpha-quartz, we studied double Ge/Rb-ion implantation, where the Rb ions serve as a catalyst only. Synthetic alpha-quartz samples were irradiated with 175 keV Rb ions and subsequently with 120 keV Ge ions with fluences of 1 x 10(14)-1 x 10(16) ions/cm(2) and postannealed at 1170 K in air. A comparative analysis of the epitaxy, migration of the implanted ions, and cathodoluminescence (CL) were carried out. The CL spectra exhibit three strong emission bands in the blue/violet range at 2.95, 3.25, and 3.53 eV, which were assigned to Rb- and/or Ge-related defect centers. For up to 10(15) implanted Ge ions/cm(2), large fraction (75%) of the Ge atoms reach substitutional Si sites after the epitaxy. (c) 2005 American Institute of Physics.
    Originalspråkengelska
    TidskriftApplied Physics Letters
    Volym87
    Utgåva2
    Sidor (från-till)021105
    Antal sidor3
    ISSN0003-6951
    DOI
    StatusPublicerad - 2005
    MoE-publikationstypA1 Tidskriftsartikel-refererad

    Vetenskapsgrenar

    • 114 Fysik

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    Sahoo, P. K ; Gasiorek, S ; Lieb, K. P ; Arstila, Kai ; Keinonen, Juhani. / Achieving epitaxy and intense luminescence in Ge/Rb-implanted -quartz. I: Applied Physics Letters. 2005 ; Vol. 87, Nr. 2. s. 021105.
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    title = "Achieving epitaxy and intense luminescence in Ge/Rb-implanted -quartz",
    abstract = "The luminescence properties of ion-beam doped silica and quartz depend sensitively on the ion species and fluence and the thermal processing during and after ion implantation. In an attempt to achieve high luminescence intensity and full planar recrystallization of alpha-quartz, we studied double Ge/Rb-ion implantation, where the Rb ions serve as a catalyst only. Synthetic alpha-quartz samples were irradiated with 175 keV Rb ions and subsequently with 120 keV Ge ions with fluences of 1 x 10(14)-1 x 10(16) ions/cm(2) and postannealed at 1170 K in air. A comparative analysis of the epitaxy, migration of the implanted ions, and cathodoluminescence (CL) were carried out. The CL spectra exhibit three strong emission bands in the blue/violet range at 2.95, 3.25, and 3.53 eV, which were assigned to Rb- and/or Ge-related defect centers. For up to 10(15) implanted Ge ions/cm(2), large fraction (75{\%}) of the Ge atoms reach substitutional Si sites after the epitaxy. (c) 2005 American Institute of Physics.",
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    Achieving epitaxy and intense luminescence in Ge/Rb-implanted -quartz. / Sahoo, P. K; Gasiorek, S; Lieb, K. P; Arstila, Kai; Keinonen, Juhani.

    I: Applied Physics Letters, Vol. 87, Nr. 2, 2005, s. 021105.

    Forskningsoutput: TidskriftsbidragArtikelVetenskapligPeer review

    TY - JOUR

    T1 - Achieving epitaxy and intense luminescence in Ge/Rb-implanted -quartz

    AU - Sahoo, P. K

    AU - Gasiorek, S

    AU - Lieb, K. P

    AU - Arstila, Kai

    AU - Keinonen, Juhani

    PY - 2005

    Y1 - 2005

    N2 - The luminescence properties of ion-beam doped silica and quartz depend sensitively on the ion species and fluence and the thermal processing during and after ion implantation. In an attempt to achieve high luminescence intensity and full planar recrystallization of alpha-quartz, we studied double Ge/Rb-ion implantation, where the Rb ions serve as a catalyst only. Synthetic alpha-quartz samples were irradiated with 175 keV Rb ions and subsequently with 120 keV Ge ions with fluences of 1 x 10(14)-1 x 10(16) ions/cm(2) and postannealed at 1170 K in air. A comparative analysis of the epitaxy, migration of the implanted ions, and cathodoluminescence (CL) were carried out. The CL spectra exhibit three strong emission bands in the blue/violet range at 2.95, 3.25, and 3.53 eV, which were assigned to Rb- and/or Ge-related defect centers. For up to 10(15) implanted Ge ions/cm(2), large fraction (75%) of the Ge atoms reach substitutional Si sites after the epitaxy. (c) 2005 American Institute of Physics.

    AB - The luminescence properties of ion-beam doped silica and quartz depend sensitively on the ion species and fluence and the thermal processing during and after ion implantation. In an attempt to achieve high luminescence intensity and full planar recrystallization of alpha-quartz, we studied double Ge/Rb-ion implantation, where the Rb ions serve as a catalyst only. Synthetic alpha-quartz samples were irradiated with 175 keV Rb ions and subsequently with 120 keV Ge ions with fluences of 1 x 10(14)-1 x 10(16) ions/cm(2) and postannealed at 1170 K in air. A comparative analysis of the epitaxy, migration of the implanted ions, and cathodoluminescence (CL) were carried out. The CL spectra exhibit three strong emission bands in the blue/violet range at 2.95, 3.25, and 3.53 eV, which were assigned to Rb- and/or Ge-related defect centers. For up to 10(15) implanted Ge ions/cm(2), large fraction (75%) of the Ge atoms reach substitutional Si sites after the epitaxy. (c) 2005 American Institute of Physics.

    KW - 114 Physical sciences

    U2 - 10.1063/1.1994953

    DO - 10.1063/1.1994953

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    SP - 021105

    JO - Applied Physics Letters

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    SN - 0003-6951

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