Amorphization of Ge and Si nanocrystals embedded in amorphous SiO by ion irradiation

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Originalspråk	engelska
Tidskrift	Physical Review B, Condensed Matter and Materials Physics
Volym	80
Nummer	14
Sidor (från-till)	144109
Antal sidor	12
ISSN	1098-0121
DOI	https://doi.org/10.1103/PhysRevB.80.144109
Status	Publicerad - 2009
MoE-publikationstyp	A1 Tidskriftsartikel-refererad

Vetenskapsgrenar

@article{47d52b947341431f82c07e14f89e2e18,

title = "Amorphization of Ge and Si nanocrystals embedded in amorphous SiO by ion irradiation",

keywords = "114 Physical sciences",

author = "Marie Backman and Flyura Djurabekova and Pakarinen, {Olli H} and Kai Nordlund and Araujo, {L. L} and Ridgway, {M. C}",

year = "2009",

doi = "10.1103/PhysRevB.80.144109",

language = "English",

volume = "80",

pages = "144109",

journal = "Physical Review B, Condensed Matter and Materials Physics",

issn = "1098-0121",

publisher = "American Physical Society ",

number = "14",

}

TY - JOUR

T1 - Amorphization of Ge and Si nanocrystals embedded in amorphous SiO by ion irradiation

AU - Backman, Marie

AU - Djurabekova, Flyura

AU - Pakarinen, Olli H

AU - Nordlund, Kai

AU - Araujo, L. L

AU - Ridgway, M. C

PY - 2009

Y1 - 2009

KW - 114 Physical sciences

U2 - 10.1103/PhysRevB.80.144109

DO - 10.1103/PhysRevB.80.144109

M3 - Article

SN - 1098-0121

VL - 80

SP - 144109

JO - Physical Review B, Condensed Matter and Materials Physics

JF - Physical Review B, Condensed Matter and Materials Physics

IS - 14

ER -