@article{61d69bd3efec4187a8f2213ce91e6d70,
title = "Annealing of the divacancy-oxygen and vacancy-oxygen complexes in silicon",
keywords = "ELECTRON-IRRADIATED SILICON, N-TYPE SILICON, SI-A CENTER, HYDROGEN DIFFUSION, DEFECTS, TEMPERATURES, 114 Physical sciences",
author = "M. Mikelsen and Bleka, \{J. H.\} and Christensen, \{J. S.\} and Monakhov, \{E. V.\} and Svensson, \{B. G.\} and J. H{\"a}rk{\"o}nen and Avset, \{B. S.\}",
year = "2007",
month = apr,
doi = "10.1103/PhysRevB.75.155202",
language = "English",
volume = "75",
journal = "Physical Review B, Condensed Matter and Materials Physics",
issn = "1098-0121",
publisher = "American Physical Society ",
number = "15",
}