Atomic Layer Deposited Hybrid Organic-Inorganic Aluminates as Potential Low-k Dielectric Materials

Karina B Klepper, Kimmo Ville Antero Miikkulainen, Ola Nilsen, Helmer Fjellvåg, Ming Liu, Dhanadeep Dutta, David Gidley, William Lanford, Liza Ross, Han Li, Sean W King

Forskningsoutput: TidskriftsbidragKonferensartikelVetenskapligPeer review

Sammanfattning

The material properties of atomic layer deposited hybrid organic-inorganic aluminate thin films have been evaluated for potential low dielectric constant (i.e. low-k) applications. The hybrid aluminates were deposited using trimethyl aluminum and various linear and aromatic carboxylic acids. The observed electrical and mechanical properties for the hybrid aluminate films varied greatly depending on the selected organic acid with k values ranging from 2.5 to 5.1 and Young’s modulus ranging from 6 to 40 GPa. Leakage currents as low as 4 x 10-10 A/cm2 (at 2 MV/cm) were obtained for films grown using saturated linear carboxylic acids. These results suggest the potential of ALD hybrid aluminate thin films for low-k dielectric applications.
Originalspråkengelska
TidskriftMRS Proceedings
Volym1791
Sidor (från-till)15-20
Antal sidor6
ISSN0272-9172
DOI
StatusPublicerad - 1 maj 2015
MoE-publikationstypA4 Artikel i en konferenspublikation
EvenemangAVS Topical Conference on Atomic Layer Deposition - Portland, OR, Förenta Staterna (USA)
Varaktighet: 28 juni 20151 juli 2015
Konferensnummer: 15

Vetenskapsgrenar

  • 221 Nanoteknologi

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