Atomic Layer Deposition of Boron-Doped Al2O3 Dielectric Films

Xinzhi Li; Marko Vehkamäki; Mykhailo Chundak; Kenichiro Mizohata; Anton Vihervaara; Markku Leskelä; Matti Putkonen; Mikko Ritala

doi:10.1002/admi.202300173

Atomic Layer Deposition of Boron-Doped Al2O3 Dielectric Films

Xinzhi Li, Marko Vehkamäki, Mykhailo Chundak, Kenichiro Mizohata, Anton Vihervaara, Markku Leskelä, Matti Putkonen, Mikko Ritala

Forskningsoutput: Tidskriftsbidrag › Artikel › Vetenskaplig › Peer review

Originalspråk	engelska
Artikelnummer	2300173
Tidskrift	Advanced Materials Interfaces
Volym	10
Nummer	18
Antal sidor	8
ISSN	2196-7350
DOI	https://doi.org/10.1002/admi.202300173
Status	Publicerad - juni 2023
MoE-publikationstyp	A1 Tidskriftsartikel-refererad

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10.1002/admi.202300173Licens: CC BY

Adv Materials Inter - 2023 - Li - Atomic Layer Deposition of Boron‐Doped Al2O3 Dielectric FilmsSlutlig publicerad version, 2,82 MBLicens: CC BY

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Matti Putkonen (Chef), Mikko Ritala (Chef), Miia Mäntymäki (Operatör), Marianna Kemell (Operatör), Marko Vehkamäki (Operatör) & Mikko Heikkilä (Operatör)
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@article{ec43e591e21f43bd93f226ad83b3980f,

title = "Atomic Layer Deposition of Boron-Doped Al2O3 Dielectric Films",

keywords = "Atomic layer deposition, Dielectric constant, doped Al2O3, 116 Chemical sciences",

author = "Xinzhi Li and Marko Vehkam{\"a}ki and Mykhailo Chundak and Kenichiro Mizohata and Anton Vihervaara and Markku Leskel{\"a} and Matti Putkonen and Mikko Ritala",

year = "2023",

month = jun,

doi = "10.1002/admi.202300173",

language = "English",

volume = "10",

journal = "Advanced Materials Interfaces ",

issn = "2196-7350",

publisher = "Wiley",

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TY - JOUR

T1 - Atomic Layer Deposition of Boron-Doped Al2O3 Dielectric Films

AU - Li, Xinzhi

AU - Vehkamäki, Marko

AU - Chundak, Mykhailo

AU - Mizohata, Kenichiro

AU - Vihervaara, Anton

AU - Leskelä, Markku

AU - Putkonen, Matti

AU - Ritala, Mikko

PY - 2023/6

Y1 - 2023/6

KW - Atomic layer deposition

KW - Dielectric constant

KW - doped Al2O3

KW - 116 Chemical sciences

U2 - 10.1002/admi.202300173

DO - 10.1002/admi.202300173

M3 - Article

SN - 2196-7350

VL - 10

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

IS - 18

M1 - 2300173

ER -

Atomic Layer Deposition of Boron-Doped Al2O3 Dielectric Films

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