Atomic Layer Deposition of GeTe

Tiina Sarnet, Viljami Pore, Timo Hatanpää, Mikko Ritala, Markku Leskelä, Alejandro Schrott, Yu Zhu, Simone Raoux, Huai-Yu Cheng

Forskningsoutput: Kapitel i bok/rapport/konferenshandlingKonferensbidragVetenskaplig

Sammanfattning

GeTe thin films were deposited by Atomic Layer Deposition (ALD). The process was studied in detail to confirm characteristic ALD behavior. Film compositions were analyzed with energy dispersive x-ray analysis. Phase change properties of the films were studied using high-temperature x-ray diffraction, resistivity measurements and a static laser tester. The crystallization properties of ALD GeTe were found to be similar to those of sputtered films.
Originalspråkengelska
Titel på gästpublikationEuropean\Phase Change and Ovonics Symposium 2011 Proceedings
Antal sidor2
Utgivningsdatum2011
Sidor210-211
StatusPublicerad - 2011
MoE-publikationstypB3 Ej refererad artikel i konferenshandlingar
EvenemangEuropean\Phase Change and Ovonics Symposium - Zürich, Schweiz
Varaktighet: 4 sep 20116 sep 2011
Konferensnummer: E\PCOS 2011

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  • 116 Kemi
  • 114 Fysik

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