@article{0150588ea1a7497ab1933995ab11aad4,
title = "Atomic Layer Deposition of Groups 4 and 5 Transition Metal Oxide Thin Films: Focus on Heteroleptic Precursors",
keywords = "ALD, Group 4 and 5 metal oxides, Heteroleptic, Precursors, Thin films, LIQUID INJECTION MOCVD, SITU REACTION-MECHANISM, HIGH THERMAL-STABILITY, HAFNIUM DIOXIDE FILMS, CYCLOPENTADIENYL PRECURSORS, TANTALUM OXIDE, IN-SITU, VANADIUM-OXIDE, ELECTRICAL-PROPERTIES, HFO2 FILMS, 116 Chemical sciences",
author = "Timothee Blanquart and Jaakko Niinist{\"o} and Mikko Ritala and Markku Leskel{\"a}",
year = "2014",
month = sep,
doi = "10.1002/cvde.201400055",
language = "English",
volume = "20",
pages = "189--208",
journal = "Chemical Vapor Deposition",
issn = "0948-1907",
publisher = "Wiley-VCH Verlag",
number = "7-9",
}