Atomic Layer Deposition Processes of HfO2 Thin Films and Layered HfO2-Al2O3-Nb2O5 Dielectrics

Kaupo Kukli; Mikko Ritala; Markku Leskelä

Atomic Layer Deposition Processes of HfO2 Thin Films and Layered HfO2-Al2O3-Nb2O5 Dielectrics

Kaupo Kukli, Mikko Ritala, Markku Leskelä

Forskningsoutput: Kapitel i bok/rapport/konferenshandling › Konferensbidrag › Vetenskaplig › Peer review

Originalspråk	engelska
Titel på gästpublikation	Conference Papers : 4th International Conference on Materials for Microelectronics and Nanoengineering
Utgivningsdatum	2002
Sidor	97-100
Status	Publicerad - 2002
MoE-publikationstyp	A4 Artikel i en konferenspublikation
Evenemang	4th International Conference on Materials for Microelectronics and Nanoengineering - Espoo, Finland Varaktighet: 1 jan 1800 → … Konferensnummer: 4

Vetenskapsgrenar

116 Kemi

Citera det här

@inproceedings{1225e44247d445e99c746b58e9b7c76c,

title = "Atomic Layer Deposition Processes of HfO2 Thin Films and Layered HfO2-Al2O3-Nb2O5 Dielectrics",

keywords = "116 Chemical sciences",

author = "Kaupo Kukli and Mikko Ritala and Markku Leskel{\"a}",

note = " Volume: Proceeding volume: ; 4th International Conference on Materials for Microelectronics and Nanoengineering ; Conference date: 01-01-1800",

year = "2002",

language = "English",

pages = "97--100",

booktitle = "Conference Papers",

}

Atomic Layer Deposition Processes of HfO2 Thin Films and Layered HfO2-Al2O3-Nb2O5 Dielectrics. / Kukli, Kaupo; Ritala, Mikko ; Leskelä, Markku.

Conference Papers : 4th International Conference on Materials for Microelectronics and Nanoengineering . 2002. s. 97-100.

Forskningsoutput: Kapitel i bok/rapport/konferenshandling › Konferensbidrag › Vetenskaplig › Peer review

TY - GEN

T1 - Atomic Layer Deposition Processes of HfO2 Thin Films and Layered HfO2-Al2O3-Nb2O5 Dielectrics

AU - Kukli, Kaupo

AU - Ritala, Mikko

AU - Leskelä, Markku

N1 - Conference code: 4

PY - 2002

Y1 - 2002

KW - 116 Chemical sciences

M3 - Conference contribution

SP - 97

EP - 100

BT - Conference Papers

T2 - 4th International Conference on Materials for Microelectronics and Nanoengineering

Y2 - 1 January 1800

ER -