Atomistic two-temperature modelling of ion track formation in silicon dioxide

Aleksi Anssi Mikael Leino; Szymon Daraszewicz; Olli Heikki Pakarinen; Kai Henrik Nordlund; Flyura Gatifovna Djurabekova

doi:10.1209/0295-5075/110/16004

Atomistic two-temperature modelling of ion track formation in silicon dioxide

Aleksi Anssi Mikael Leino, Szymon Daraszewicz, Olli Heikki Pakarinen, Kai Henrik Nordlund, Flyura Gatifovna Djurabekova

Forskningsoutput: Tidskriftsbidrag › Artikel › Vetenskaplig › Peer review

Originalspråk	engelska
Artikelnummer	16004
Tidskrift	Europhysics Letters
Volym	110
Utgåva	1
Antal sidor	5
ISSN	0295-5075
DOI	https://doi.org/10.1209/0295-5075/110/16004
Status	Publicerad - apr 2015
MoE-publikationstyp	A1 Tidskriftsartikel-refererad

Vetenskapsgrenar

114 Fysik

Åtkomst av dokument

10.1209/0295-5075/110/16004

Citera det här

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title = "Atomistic two-temperature modelling of ion track formation in silicon dioxide",

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author = "Leino, {Aleksi Anssi Mikael} and Szymon Daraszewicz and Pakarinen, {Olli Heikki} and Nordlund, {Kai Henrik} and Djurabekova, {Flyura Gatifovna}",

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AU - Leino, Aleksi Anssi Mikael

AU - Daraszewicz, Szymon

AU - Pakarinen, Olli Heikki

AU - Nordlund, Kai Henrik

AU - Djurabekova, Flyura Gatifovna

PY - 2015/4

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JO - Europhysics Letters

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