Cadmium Telluride X-ray pad detectors with different passivation dielectrics

Akiko Gädda, Jennifer Ott, Aneliya Karadzhinova-Ferrer, Maria Golovleva, Matti Kalliokoski, Alexander Winkler, Panja Luukka, Jaakko Härkönen

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The suitability of two low-temperature dielectric passivation layer processes for the fabrication of Cadmium Telluride (CdTe) X-ray detectors has been investigated. The CdTe crystals with a size of (10 10 1) mm were coated with sputtered aluminum nitride (AlN) or with aluminum oxide (AlO) grown by the atomic layer deposition (ALD) method. The metallization contacts of the detectors were made by titanium tungsten (TiW) and gold (Au) metal sputtering depositions. The pad detector structures were patterned with proximity-contactless photolithography techniques followed by lift-off patterning of the electrodes. The detector properties were characterized at room temperature by Transient Current Technique (TCT) measurements. The obtained results were compared and verified by numerical TCAD simulations of the detector response. Our results indicate that higher signal charge was collected from samples with AlO. Furthermore, no significant laser light induced signal decay by CdTe material polarization was observed within order of 30 min of continuous illumination.
Originalspråkengelska
TidskriftNuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment
Volym924
Sidor (från-till)33-37
Antal sidor5
ISSN0168-9002
DOI
StatusPublicerad - 21 apr 2019
MoE-publikationstypA1 Tidskriftsartikel-refererad

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title = "Cadmium Telluride X-ray pad detectors with different passivation dielectrics",
abstract = "The suitability of two low-temperature dielectric passivation layer processes for the fabrication of Cadmium Telluride (CdTe) X-ray detectors has been investigated. The CdTe crystals with a size of (10 10 1) mm were coated with sputtered aluminum nitride (AlN) or with aluminum oxide (AlO) grown by the atomic layer deposition (ALD) method. The metallization contacts of the detectors were made by titanium tungsten (TiW) and gold (Au) metal sputtering depositions. The pad detector structures were patterned with proximity-contactless photolithography techniques followed by lift-off patterning of the electrodes. The detector properties were characterized at room temperature by Transient Current Technique (TCT) measurements. The obtained results were compared and verified by numerical TCAD simulations of the detector response. Our results indicate that higher signal charge was collected from samples with AlO. Furthermore, no significant laser light induced signal decay by CdTe material polarization was observed within order of 30 min of continuous illumination.",
keywords = "114 Physical sciences, Cadmium Telluride (CdTe), Atomic layer deposition (ALD), X-ray detector, LAYER DEPOSITION ALD, CDTE, AL2O3, PROGRESS, FIELD, SI",
author = "Akiko G{\"a}dda and Jennifer Ott and Aneliya Karadzhinova-Ferrer and Maria Golovleva and Matti Kalliokoski and Alexander Winkler and Panja Luukka and Jaakko H{\"a}rk{\"o}nen",
year = "2019",
month = "4",
day = "21",
doi = "10.1016/j.nima.2018.08.063",
language = "English",
volume = "924",
pages = "33--37",
journal = "Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment",
issn = "0168-9002",
publisher = "Elsevier Scientific Publ. Co",

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TY - JOUR

T1 - Cadmium Telluride X-ray pad detectors with different passivation dielectrics

AU - Gädda, Akiko

AU - Ott, Jennifer

AU - Karadzhinova-Ferrer, Aneliya

AU - Golovleva, Maria

AU - Kalliokoski, Matti

AU - Winkler, Alexander

AU - Luukka, Panja

AU - Härkönen, Jaakko

PY - 2019/4/21

Y1 - 2019/4/21

N2 - The suitability of two low-temperature dielectric passivation layer processes for the fabrication of Cadmium Telluride (CdTe) X-ray detectors has been investigated. The CdTe crystals with a size of (10 10 1) mm were coated with sputtered aluminum nitride (AlN) or with aluminum oxide (AlO) grown by the atomic layer deposition (ALD) method. The metallization contacts of the detectors were made by titanium tungsten (TiW) and gold (Au) metal sputtering depositions. The pad detector structures were patterned with proximity-contactless photolithography techniques followed by lift-off patterning of the electrodes. The detector properties were characterized at room temperature by Transient Current Technique (TCT) measurements. The obtained results were compared and verified by numerical TCAD simulations of the detector response. Our results indicate that higher signal charge was collected from samples with AlO. Furthermore, no significant laser light induced signal decay by CdTe material polarization was observed within order of 30 min of continuous illumination.

AB - The suitability of two low-temperature dielectric passivation layer processes for the fabrication of Cadmium Telluride (CdTe) X-ray detectors has been investigated. The CdTe crystals with a size of (10 10 1) mm were coated with sputtered aluminum nitride (AlN) or with aluminum oxide (AlO) grown by the atomic layer deposition (ALD) method. The metallization contacts of the detectors were made by titanium tungsten (TiW) and gold (Au) metal sputtering depositions. The pad detector structures were patterned with proximity-contactless photolithography techniques followed by lift-off patterning of the electrodes. The detector properties were characterized at room temperature by Transient Current Technique (TCT) measurements. The obtained results were compared and verified by numerical TCAD simulations of the detector response. Our results indicate that higher signal charge was collected from samples with AlO. Furthermore, no significant laser light induced signal decay by CdTe material polarization was observed within order of 30 min of continuous illumination.

KW - 114 Physical sciences

KW - Cadmium Telluride (CdTe)

KW - Atomic layer deposition (ALD)

KW - X-ray detector

KW - LAYER DEPOSITION ALD

KW - CDTE

KW - AL2O3

KW - PROGRESS

KW - FIELD

KW - SI

U2 - 10.1016/j.nima.2018.08.063

DO - 10.1016/j.nima.2018.08.063

M3 - Article

VL - 924

SP - 33

EP - 37

JO - Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment

JF - Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment

SN - 0168-9002

ER -