Diffusion properties of Ga in Si[sub x]-Ge[sub x] alloys

I Riihimäki, A Virtanen, H Kettunen, Petteri Pusa, Jyrki Räisänen

Forskningsoutput: Tidskriftsbidrag › Artikel › Vetenskaplig › Peer review

Originalspråk	engelska
Tidskrift	Journal of Applied Physics
Volym	104
Nummer	12
Sidor (från-till)	123510
Antal sidor	3
ISSN	0021-8979
DOI	https://doi.org/10.1063/1.3041658
Status	Publicerad - 2008
MoE-publikationstyp	A1 Tidskriftsartikel-refererad

Vetenskapsgrenar

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title = "Diffusion properties of Ga in Si[sub x]-Ge[sub x] alloys",

keywords = "114 Physical sciences",

author = "I Riihim{\"a}ki and A Virtanen and H Kettunen and Petteri Pusa and Jyrki R{\"a}is{\"a}nen",

year = "2008",

doi = "10.1063/1.3041658",

language = "English",

volume = "104",

pages = "123510",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Diffusion properties of Ga in Si[sub x]-Ge[sub x] alloys

AU - Riihimäki, I

AU - Virtanen, A

AU - Kettunen, H

AU - Pusa, Petteri

AU - Räisänen, Jyrki

PY - 2008

Y1 - 2008

KW - 114 Physical sciences

UR - https://www.scopus.com/pages/publications/58149302864

U2 - 10.1063/1.3041658

DO - 10.1063/1.3041658

M3 - Article

SN - 0021-8979

VL - 104

SP - 123510

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 12

ER -