Diversity of split Ga vacancies in β-Ga2O3

F. Tuomisto; I. Zhelezova; I. Makkonen

doi:10.1117/12.2664997

Diversity of split Ga vacancies in β-Ga2O3

Forskningsoutput: Kapitel i bok/rapport/konferenshandling › Konferensbidrag › Vetenskaplig › Peer review

Sammanfattning

Positron annihilation spectroscopy has been applied to study the vacancy-type defects in a wide range of β-Ga2O3 bulk crystals and thin films. The experimental data show that all studied samples contain high concentrations of Ga vacancies in a split vacancy configuration. These split Ga vacancies are observed also with other experimental techniques, and theoretical calculations predict that their formation energies are lower than those of other vacancy configurations. The exact structure of the split Ga vacancies appears to vary across samples.

Originalspråk	engelska
Titel på värdpublikation	Oxide-based Materials and Devices XIV
Redaktörer	David J. Rogers, Ferechteh H. Teherani
Förlag	Washington SPIE
Utgivningsdatum	16 mars 2023
Artikelnummer	1242201
ISBN (elektroniskt)	9781510659490
DOI	https://doi.org/10.1117/12.2664997
Status	Publicerad - 16 mars 2023
MoE-publikationstyp	A4 Artikel i en konferenspublikation
Evenemang	Oxide-based Materials and Devices XIV 2023 - San Francisco, Förenta Staterna (USA) Varaktighet: 30 jan. 2023 → 2 feb. 2023

Publikationsserier

Namn	Proceedings of SPIE - The International Society for Optical Engineering
Volym	12422
ISSN (tryckt)	0277-786X
ISSN (elektroniskt)	1996-756X

Bibliografisk information

Publisher Copyright:
© 2023 SPIE.

Vetenskapsgrenar

114 Fysik
221 Nanoteknologi
216 Materialteknik

Åtkomst av dokument

10.1117/12.2664997

DiversityAccepterat manuskript från författare, 427 KBLicens: !!Unspecified

Citera det här

@inproceedings{4b2f589de5a84a7cb0aa82fc95852150,

title = "Diversity of split Ga vacancies in β-Ga2O3",

abstract = "Positron annihilation spectroscopy has been applied to study the vacancy-type defects in a wide range of β-Ga2O3 bulk crystals and thin films. The experimental data show that all studied samples contain high concentrations of Ga vacancies in a split vacancy configuration. These split Ga vacancies are observed also with other experimental techniques, and theoretical calculations predict that their formation energies are lower than those of other vacancy configurations. The exact structure of the split Ga vacancies appears to vary across samples.",

keywords = "defect, gallium oxide, positron annihilation spectroscopy, vacancy, 114 Physical sciences, 221 Nano-technology, 216 Materials engineering",

author = "F. Tuomisto and I. Zhelezova and I. Makkonen",

note = "Publisher Copyright: {\textcopyright} 2023 SPIE.; Oxide-based Materials and Devices XIV 2023 ; Conference date: 30-01-2023 Through 02-02-2023",

year = "2023",

month = mar,

day = "16",

doi = "10.1117/12.2664997",

language = "English",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Washington SPIE ",

editor = "Rogers, {David J.} and Teherani, {Ferechteh H.}",

booktitle = "Oxide-based Materials and Devices XIV",

address = "United States",

}

Tuomisto, F , Zhelezova, I & Makkonen, I 2023, Diversity of split Ga vacancies in β-Ga2O3. i DJ Rogers & FH Teherani (red), Oxide-based Materials and Devices XIV., 1242201, Proceedings of SPIE - The International Society for Optical Engineering, vol. 12422, Washington SPIE , Oxide-based Materials and Devices XIV 2023, San Francisco, Förenta Staterna (USA), 30/01/2023. https://doi.org/10.1117/12.2664997

Diversity of split Ga vacancies in β-Ga2O3. / Tuomisto, F.; Zhelezova, I.; Makkonen, I.
Oxide-based Materials and Devices XIV. red. / David J. Rogers; Ferechteh H. Teherani. Washington SPIE , 2023. 1242201 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 12422).

Forskningsoutput: Kapitel i bok/rapport/konferenshandling › Konferensbidrag › Vetenskaplig › Peer review

TY - GEN

T1 - Diversity of split Ga vacancies in β-Ga2O3

AU - Tuomisto, F.

AU - Zhelezova, I.

AU - Makkonen, I.

PY - 2023/3/16

Y1 - 2023/3/16

N2 - Positron annihilation spectroscopy has been applied to study the vacancy-type defects in a wide range of β-Ga2O3 bulk crystals and thin films. The experimental data show that all studied samples contain high concentrations of Ga vacancies in a split vacancy configuration. These split Ga vacancies are observed also with other experimental techniques, and theoretical calculations predict that their formation energies are lower than those of other vacancy configurations. The exact structure of the split Ga vacancies appears to vary across samples.

AB - Positron annihilation spectroscopy has been applied to study the vacancy-type defects in a wide range of β-Ga2O3 bulk crystals and thin films. The experimental data show that all studied samples contain high concentrations of Ga vacancies in a split vacancy configuration. These split Ga vacancies are observed also with other experimental techniques, and theoretical calculations predict that their formation energies are lower than those of other vacancy configurations. The exact structure of the split Ga vacancies appears to vary across samples.

KW - defect

KW - gallium oxide

KW - positron annihilation spectroscopy

KW - vacancy

KW - 114 Physical sciences

KW - 221 Nano-technology

KW - 216 Materials engineering

U2 - 10.1117/12.2664997

DO - 10.1117/12.2664997

M3 - Conference contribution

AN - SCOPUS:85159786343

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Oxide-based Materials and Devices XIV

A2 - Rogers, David J.

A2 - Teherani, Ferechteh H.

PB - Washington SPIE

T2 - Oxide-based Materials and Devices XIV 2023

Y2 - 30 January 2023 through 2 February 2023

ER -