Molecular dynamics simulations of swift heavy ion induced defect recovery in SiC

M. Backman; M. Toulemonde; O. H. Pakarinen; N. Juslin; F. Djurabekova; K. Nordlund; A. Debelle; W. J. Weber

doi:10.1016/j.commatsci.2012.09.010

Molecular dynamics simulations of swift heavy ion induced defect recovery in SiC

M. Backman, M. Toulemonde, O. H. Pakarinen, N. Juslin, F. Djurabekova, K. Nordlund, A. Debelle, W. J. Weber

Forskningsoutput: Tidskriftsbidrag › Artikel › Vetenskaplig › Peer review

Originalspråk	engelska
Tidskrift	Computational Materials Science
Volym	67
Sidor (från-till)	261-265
Antal sidor	5
ISSN	0927-0256
DOI	https://doi.org/10.1016/j.commatsci.2012.09.010
Status	Publicerad - feb. 2013
MoE-publikationstyp	A1 Tidskriftsartikel-refererad

Vetenskapsgrenar

114 Fysik

Åtkomst av dokument

10.1016/j.commatsci.2012.09.010

Citera det här

@article{730a0c4828324eedb76c31781984b4ad,

title = "Molecular dynamics simulations of swift heavy ion induced defect recovery in SiC",

keywords = "Radiation damage, Molecular dynamics, Inelastic thermal spike, Swift heavy ion, Silicon carbide, THERMAL SPIKE MODEL, AMORPHOUS REGIONS, SEMICONDUCTORS, ACCUMULATION, RADIATION, SILICON, 114 Physical sciences",

author = "M. Backman and M. Toulemonde and Pakarinen, {O. H.} and N. Juslin and F. Djurabekova and K. Nordlund and A. Debelle and Weber, {W. J.}",

year = "2013",

month = feb,

doi = "10.1016/j.commatsci.2012.09.010",

language = "English",

volume = "67",

pages = "261--265",

journal = "Computational Materials Science",

issn = "0927-0256",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Molecular dynamics simulations of swift heavy ion induced defect recovery in SiC

AU - Backman, M.

AU - Toulemonde, M.

AU - Pakarinen, O. H.

AU - Juslin, N.

AU - Djurabekova, F.

AU - Nordlund, K.

AU - Debelle, A.

AU - Weber, W. J.

PY - 2013/2

Y1 - 2013/2

KW - Radiation damage

KW - Molecular dynamics

KW - Inelastic thermal spike

KW - Swift heavy ion

KW - Silicon carbide

KW - THERMAL SPIKE MODEL

KW - AMORPHOUS REGIONS

KW - SEMICONDUCTORS

KW - ACCUMULATION

KW - RADIATION

KW - SILICON

KW - 114 Physical sciences

U2 - 10.1016/j.commatsci.2012.09.010

DO - 10.1016/j.commatsci.2012.09.010

M3 - Article

SN - 0927-0256

VL - 67

SP - 261

EP - 265

JO - Computational Materials Science

JF - Computational Materials Science

ER -