Photon Detector Research at Helsinki Institute of Physics (HIP) and at Ruder Boskovic Institute (RBI)

Jens Erik Brucken, Akiko Gädda, Jennifer Ott, Tiina Sirea Naaranoja, Laura Emilia Martikainen, Aneliya Karadzhinova, Matti Kalevi Kalliokoski, Maria Golovleva, Stefanie Kirschenmann, Vladyslav Litichevskyi, A. Petrinec, Panja Luukka, Jaakko Juhana Härkönen, Ana Petrinec

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Sammanfattning

In this report we describe a design, fabrication process and characterization of photon detectors made of bulk Cadmium Telluride (CdTe) crystals, silicon drift detectors (SDD) and silicon detectors attached with conversion layer scintillator materials (SiS). The Si wafer and chip-scale CdTe detector processing with related interconnection processing was carried out in clean room premises of Micronova center in Espoo, Finland. Unlike Si wafers, CdTe processing must be carried out at the temperatures lower than 150C. Thus, we have developed a low temperature passivation layer processes of aluminum oxide (Al2O3) grown by Atomic Layer Deposition (ALD) method. The CdTe crystals of the size of 10 × 10 × 1mm3 were patterned with proximity-contactless photo-lithography techniques. The detector properties were characterized by IV-CV, Transient Current Technique (TCT) and scanning micrometer precision proton beam methods. The experimental results were verified with TCAD simulations with appropriate defect and material parameters.
Originalspråkengelska
TidskriftXiangtan Daxue Ziran Kexue xuebao
Utgåva4/2018
Sidor (från-till)115-120
Antal sidor6
ISSN1000-5900
DOI
StatusPublicerad - aug 2018
MoE-publikationstypB3 Ej refererad artikel i konferenshandlingar
EvenemangSecond Workshop of Semiconductor Detectors and International High Level Forum - Huayin International Hotel, Xiangtan, Kina
Varaktighet: 13 aug 201815 aug 2018

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