Photon Detector Research at Helsinki Institute of Physics (HIP) and at Ruder Boskovic Institute (RBI)

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Sammanfattning

In this report we describe a design, fabrication process and characterization of photon detectors made of bulk Cadmium Telluride (CdTe) crystals, silicon drift detectors (SDD) and silicon detectors attached with conversion layer scintillator materials (SiS). The Si wafer and chip-scale CdTe detector processing with related interconnection processing was carried out in clean room premises of Micronova center in Espoo, Finland. Unlike Si wafers, CdTe processing must be carried out at the temperatures lower than 150C. Thus, we have developed a low temperature passivation layer processes of aluminum oxide (Al2O3) grown by Atomic Layer Deposition (ALD) method. The CdTe crystals of the size of 10 × 10 × 1mm3 were patterned with proximity-contactless photo-lithography techniques. The detector properties were characterized by IV-CV, Transient Current Technique (TCT) and scanning micrometer precision proton beam methods. The experimental results were verified with TCAD simulations with appropriate defect and material parameters.
Originalspråkengelska
TidskriftXiangtan Daxue Ziran Kexue xuebao
Utgåva4/2018
Sidor (från-till)115-120
Antal sidor6
ISSN1000-5900
DOI
StatusPublicerad - aug 2018
MoE-publikationstypB3 Ej refererad artikel i konferenshandlingar
EvenemangSecond Workshop of Semiconductor Detectors and International High Level Forum - Huayin International Hotel, Xiangtan, Kina
Varaktighet: 13 aug 201815 aug 2018

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  • 114 Fysik

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title = "Photon Detector Research at Helsinki Institute of Physics (HIP) and at Ruder Boskovic Institute (RBI)",
abstract = "In this report we describe a design, fabrication process and characterization of photon detectors made of bulk Cadmium Telluride (CdTe) crystals, silicon drift detectors (SDD) and silicon detectors attached with conversion layer scintillator materials (SiS). The Si wafer and chip-scale CdTe detector processing with related interconnection processing was carried out in clean room premises of Micronova center in Espoo, Finland. Unlike Si wafers, CdTe processing must be carried out at the temperatures lower than 150◦C. Thus, we have developed a low temperature passivation layer processes of aluminum oxide (Al2O3) grown by Atomic Layer Deposition (ALD) method. The CdTe crystals of the size of 10 × 10 × 1mm3 were patterned with proximity-contactless photo-lithography techniques. The detector properties were characterized by IV-CV, Transient Current Technique (TCT) and scanning micrometer precision proton beam methods. The experimental results were verified with TCAD simulations with appropriate defect and material parameters.",
keywords = "114 Physical sciences",
author = "Brucken, {Jens Erik} and Akiko G{\"a}dda and Jennifer Ott and Naaranoja, {Tiina Sirea} and Martikainen, {Laura Emilia} and Aneliya Karadzhinova and Kalliokoski, {Matti Kalevi} and Maria Golovleva and Stefanie Kirschenmann and Vladyslav Litichevskyi and A. Petrinec and Panja Luukka and H{\"a}rk{\"o}nen, {Jaakko Juhana} and Ana Petrinec",
year = "2018",
month = "8",
doi = "10.13715/j.cnki.nsjxu.2018.04.025",
language = "English",
pages = "115--120",
journal = "Xiangtan Daxue Ziran Kexue xuebao",
issn = "1000-5900",
publisher = "Xiangtan Daxue",
number = "4/2018",

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TY - JOUR

T1 - Photon Detector Research at Helsinki Institute of Physics (HIP) and at Ruder Boskovic Institute (RBI)

AU - Brucken, Jens Erik

AU - Gädda, Akiko

AU - Ott, Jennifer

AU - Naaranoja, Tiina Sirea

AU - Martikainen, Laura Emilia

AU - Karadzhinova, Aneliya

AU - Kalliokoski, Matti Kalevi

AU - Golovleva, Maria

AU - Kirschenmann, Stefanie

AU - Litichevskyi, Vladyslav

AU - Petrinec, A.

AU - Luukka, Panja

AU - Härkönen, Jaakko Juhana

AU - Petrinec, Ana

PY - 2018/8

Y1 - 2018/8

N2 - In this report we describe a design, fabrication process and characterization of photon detectors made of bulk Cadmium Telluride (CdTe) crystals, silicon drift detectors (SDD) and silicon detectors attached with conversion layer scintillator materials (SiS). The Si wafer and chip-scale CdTe detector processing with related interconnection processing was carried out in clean room premises of Micronova center in Espoo, Finland. Unlike Si wafers, CdTe processing must be carried out at the temperatures lower than 150◦C. Thus, we have developed a low temperature passivation layer processes of aluminum oxide (Al2O3) grown by Atomic Layer Deposition (ALD) method. The CdTe crystals of the size of 10 × 10 × 1mm3 were patterned with proximity-contactless photo-lithography techniques. The detector properties were characterized by IV-CV, Transient Current Technique (TCT) and scanning micrometer precision proton beam methods. The experimental results were verified with TCAD simulations with appropriate defect and material parameters.

AB - In this report we describe a design, fabrication process and characterization of photon detectors made of bulk Cadmium Telluride (CdTe) crystals, silicon drift detectors (SDD) and silicon detectors attached with conversion layer scintillator materials (SiS). The Si wafer and chip-scale CdTe detector processing with related interconnection processing was carried out in clean room premises of Micronova center in Espoo, Finland. Unlike Si wafers, CdTe processing must be carried out at the temperatures lower than 150◦C. Thus, we have developed a low temperature passivation layer processes of aluminum oxide (Al2O3) grown by Atomic Layer Deposition (ALD) method. The CdTe crystals of the size of 10 × 10 × 1mm3 were patterned with proximity-contactless photo-lithography techniques. The detector properties were characterized by IV-CV, Transient Current Technique (TCT) and scanning micrometer precision proton beam methods. The experimental results were verified with TCAD simulations with appropriate defect and material parameters.

KW - 114 Physical sciences

U2 - 10.13715/j.cnki.nsjxu.2018.04.025

DO - 10.13715/j.cnki.nsjxu.2018.04.025

M3 - Conference article

SP - 115

EP - 120

JO - Xiangtan Daxue Ziran Kexue xuebao

JF - Xiangtan Daxue Ziran Kexue xuebao

SN - 1000-5900

IS - 4/2018

ER -