@article{1c82719b9ff9412f9dc6c07056652237,
title = "Processing of AC-coupled n-in-p pixel detectors on MCz silicon using atomic layer deposited aluminium oxide",
keywords = "Atomic layer deposition (ALD), Al2O3, Pixel detector, Capacitive coupling, MAGNETIC-CZOCHRALSKI SILICON, SURFACE PASSIVATION, ALD, AL2O3, EFFICIENCY, 114 Physical sciences",
author = "J. Ott and A. Gadda and S. Bharthuar and E. Brucken and M. Golovleva and J. H{\"a}rkonen and M. Kalliokoski and A. Karadzhinova-Ferrer and S. Kirschenmann and V. Litichevskyi and P. Luukka and L. Martikainen and T. Naaranoja",
year = "2020",
month = apr,
day = "1",
doi = "10.1016/j.nima.2019.162547",
language = "English",
volume = "958",
journal = "Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment",
issn = "0168-9002",
publisher = "Elsevier B.V.",
note = "15th Vienna Conference on Instrumentation (VCI) ; Conference date: 18-02-2019 Through 22-02-2019",
}