Production of defects in hexagonal boron nitride monolayer under ion irradiation

Ossi Juhani Lehtinen; Etienne Dumur; Jani Kotakoski; Arkady Krasheninnikov; Kai Nordlund; Juhani Keinonen

doi:10.1016/j.nimb.2010.11.027

Production of defects in hexagonal boron nitride monolayer under ion irradiation

Ossi Juhani Lehtinen, Etienne Dumur, Jani Kotakoski, Arkady Krasheninnikov, Kai Nordlund, Juhani Keinonen

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Forskningsoutput: Tidskriftsbidrag › Artikel › Vetenskaplig › Peer review

Sammanfattning

Atomistic computer simulations based on analytical potentials are employed to investigate the response of a hexagonal boron nitride monolayer to irradiation with noble gas ions having energies from 35 eV up to 10 MeV. Probabilities for creating different types of defects are calculated as functions of ion energy and incidence angle, along with sputtering yields of boron and nitrogen atoms. The presented results can be used for the optimization of ion processing of single-layer and bulk hexagonal boron nitride samples and for predicting the evolution of the material in radiation hostile environments.

Originalspråk	engelska
Tidskrift	Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Volym	269
Nummer	11
Sidor (från-till)	1327-1331
Antal sidor	5
ISSN	0168-583X
DOI	https://doi.org/10.1016/j.nimb.2010.11.027
Status	Publicerad - 2011
MoE-publikationstyp	A1 Tidskriftsartikel-refererad

Vetenskapsgrenar

114 Fysik

Åtkomst av dokument

10.1016/j.nimb.2010.11.027

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abstract = "Atomistic computer simulations based on analytical potentials are employed to investigate the response of a hexagonal boron nitride monolayer to irradiation with noble gas ions having energies from 35 eV up to 10 MeV. Probabilities for creating different types of defects are calculated as functions of ion energy and incidence angle, along with sputtering yields of boron and nitrogen atoms. The presented results can be used for the optimization of ion processing of single-layer and bulk hexagonal boron nitride samples and for predicting the evolution of the material in radiation hostile environments.",

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Production of defects in hexagonal boron nitride monolayer under ion irradiation. / Lehtinen, Ossi Juhani; Dumur, Etienne; Kotakoski, Jani et al.

I: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, Vol. 269, Nr. 11, 2011, s. 1327-1331.

Forskningsoutput: Tidskriftsbidrag › Artikel › Vetenskaplig › Peer review

TY - JOUR

T1 - Production of defects in hexagonal boron nitride monolayer under ion irradiation

AU - Lehtinen, Ossi Juhani

AU - Dumur, Etienne

AU - Kotakoski, Jani

AU - Krasheninnikov, Arkady

AU - Nordlund, Kai

AU - Keinonen, Juhani

PY - 2011

Y1 - 2011

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AB - Atomistic computer simulations based on analytical potentials are employed to investigate the response of a hexagonal boron nitride monolayer to irradiation with noble gas ions having energies from 35 eV up to 10 MeV. Probabilities for creating different types of defects are calculated as functions of ion energy and incidence angle, along with sputtering yields of boron and nitrogen atoms. The presented results can be used for the optimization of ion processing of single-layer and bulk hexagonal boron nitride samples and for predicting the evolution of the material in radiation hostile environments.

KW - 114 Physical sciences

U2 - 10.1016/j.nimb.2010.11.027

DO - 10.1016/j.nimb.2010.11.027

M3 - Article

VL - 269

SP - 1327

EP - 1331

JO - Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

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ER -