Reductive Thermal Atomic Layer Deposition Process for Gold

Forskningsoutput: TidskriftsbidragArtikelVetenskapligPeer review

Sammanfattning

In this work, we developed an atomic layer deposition(ALD) processfor gold metal thin films from chloro-(triethylphosphine)-gold-(I) [AuCl-(PEt3)] and 1,4-bis-(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)(2)DHP]. High purity gold films were depositedon different substrate materials at 180 degrees C for the first timewith thermal reductive ALD. The growth rate is 1.7 angstrom/cycle afterthe film reaches full coverage. The films have a very low resistivityclose to the bulk value, and a minimal amount of impurities couldbe detected. The reaction mechanism of the process is studied in situwith a quartz crystal microbalance and a quadrupole mass spectrometer.
Originalspråkengelska
TidskriftACS materials Au
Volym3
Nummer3
Sidor (från-till)206-214
Antal sidor9
DOI
StatusPublicerad - maj 2023
MoE-publikationstypA1 Tidskriftsartikel-refererad

Vetenskapsgrenar

  • 116 Kemi

Citera det här