Sammanfattning
In this work, we developed an atomic layer deposition(ALD) processfor gold metal thin films from chloro-(triethylphosphine)-gold-(I) [AuCl-(PEt3)] and 1,4-bis-(trimethylgermyl)-1,4-dihydropyrazine [(Me3Ge)(2)DHP]. High purity gold films were depositedon different substrate materials at 180 degrees C for the first timewith thermal reductive ALD. The growth rate is 1.7 angstrom/cycle afterthe film reaches full coverage. The films have a very low resistivityclose to the bulk value, and a minimal amount of impurities couldbe detected. The reaction mechanism of the process is studied in situwith a quartz crystal microbalance and a quadrupole mass spectrometer.
Originalspråk | engelska |
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Tidskrift | ACS materials Au |
Volym | 3 |
Nummer | 3 |
Sidor (från-till) | 206-214 |
Antal sidor | 9 |
DOI | |
Status | Publicerad - maj 2023 |
MoE-publikationstyp | A1 Tidskriftsartikel-refererad |
Vetenskapsgrenar
- 116 Kemi
Utrustning
-
HelsinkiALD
Putkonen, M. (Chef), Ritala, M. (Chef), Mäntymäki, M. (Operatör), Kemell, M. (Operatör), Vehkamäki, M. (Operatör) & Heikkilä, M. (Operatör)
Avdelningen för kemiUtrustning/facilitet: Forskningslaboratorium