Simulations of ion-beam induced atom-mixing over Si/SiO2 interfaces for preparation of concentration profiles

Forskningsoutput: KonferensbidragSammanfattning

Originalspråkengelska
StatusPublicerad - 22 mar 2017
EvenemangPhysics Days 2017 - Helsinki, Finland
Varaktighet: 22 mar 201724 mar 2017

Konferens

KonferensPhysics Days 2017
LandFinland
OrtHelsinki
Period22/03/201724/03/2017

Vetenskapsgrenar

  • 114 Fysik

Citera det här

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title = "Simulations of ion-beam induced atom-mixing over Si/SiO2 interfaces for preparation of concentration profiles",
keywords = "114 Physical sciences",
author = "Christoffer Fridlund and Kai Nordlund and Flyura Djurabekova",
year = "2017",
month = "3",
day = "22",
language = "English",
note = "Physics Days 2017 ; Conference date: 22-03-2017 Through 24-03-2017",

}

Simulations of ion-beam induced atom-mixing over Si/SiO2 interfaces for preparation of concentration profiles. / Fridlund, Christoffer; Nordlund, Kai; Djurabekova, Flyura.

2017. Abstract från Physics Days 2017, Helsinki, Finland.

Forskningsoutput: KonferensbidragSammanfattning

TY - CONF

T1 - Simulations of ion-beam induced atom-mixing over Si/SiO2 interfaces for preparation of concentration profiles

AU - Fridlund, Christoffer

AU - Nordlund, Kai

AU - Djurabekova, Flyura

PY - 2017/3/22

Y1 - 2017/3/22

KW - 114 Physical sciences

M3 - Abstract

ER -