@article{310aa5ba631840ef831c4b3756e13e03,
title = "Single-parameter model for the post-breakdown conduction characteristics of HoTiOx-based MIM capacitors",
keywords = "Breakdown, Reliability, High-kappa, Resistive switching, SOFT BREAKDOWN, DIODE EQUATION, GATE OXIDES, TEMPERATURE, DEVICES, SILICON, LAYERS, 116 Chemical sciences, 114 Physical sciences",
author = "J. Blasco and H. Castan and H. Garcia and S. Duenas and J. Sune and M. Kemell and K. Kukli and M. Ritala and M. Leskel{\"a} and E. Miranda",
note = " Volume: 54 ; European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF) ; Conference date: 29-09-2014 Through 02-10-2014",
year = "2014",
doi = "10.1016/j.microrel.2014.07.067",
language = "English",
volume = "54",
pages = "1707--1711",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "PERGAMON",
number = "9-10",
}