Study of the influence of the dielectric composition of Al/Ti/ZrO2:Al2O3/TiN/Si/Al structures on the resistive switching behavior for memory applications

H. Castán, S. Dueñas, K. Kukli, M. Kemell, M. Ritala, M. Leskelä

Forskningsoutput: TidskriftsbidragKonferensartikelVetenskapligPeer review

Sammanfattning

The memory behavior of Al/Ti/ZrO2:Al2O3/TiN/Si/Al devices is investigated in this work. They are adequate to be used as resistive switching memories, with two clearly different states. Besides, intermediate states are also accessible in a controllable manner. The electrical characterization in terms of admittance parameters provides relevant complementary information. The cation ratio influences the memory maps and can be changed to obtain specifically sized shape of the maps. © The Electrochemical Society.
Originalspråkengelska
TidskriftECS transactions
Volym85
Utgåva8
Sidor (från-till)143-148
Antal sidor6
ISSN1938-5862
DOI
StatusPublicerad - 2018
MoE-publikationstypA4 Artikel i en konferenspublikation
EvenemangECS Meeting: Advanced CMOS-Compatible Semiconductor Devices 18 - Seattle, Förenta Staterna (USA)
Varaktighet: 13 maj 201817 maj 2018
Konferensnummer: 233
https://www.electrochem.org/233

Vetenskapsgrenar

  • 116 Kemi

Citera det här